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this is information on a product in full production. march 2014 docid023012 rev 3 1/12 STT6N3LLH6 n-channel 30 v, 0.021 typ., 6 a stripfet? vi deepgate? power mosfet in a sot23-6l package datasheet - production data figure 1. internal schematic diagram features ? r ds(on) * q g industry benchmark ? extremely low on-resistance r ds(on) ? high avalanche ruggedness ? low gate drive power losses applications ? switching applications description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. sot23-6l 1 2 3 6 5 4 order code v dss r ds(on) max i d p tot STT6N3LLH6 30 v 0.025 (v gs = 10 v) 6 a 1.6 w 0.036 (v gs = 4.5 v) table 1. device summary order code marking package packaging STT6N3LLH6 stg1 sot23-6l tape and reel www.st.com
contents STT6N3LLH6 2/12 docid023012 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
docid023012 rev 3 3/12 STT6N3LLH6 electrical ratings 12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d drain current (continuous) at t pcb = 25 c 6 a i d drain current (continuous) at t pcb = 100 c 3.75 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 24 a p tot total dissipation at t c = 25 c 1.6 w derating factor 0.013 w/c t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal resistance symbol parameter value unit r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch2, 2oz cu, t < 10 sec thermal resistance junction-pcb max 78 c/w
electrical characteristics STT6N3LLH6 4/12 docid023012 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 30 v v ds = 30 v, tc = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a1 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 3 a 0.021 0.025 v gs = 4.5 v, i d = 3 a 0.032 0.036 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 24 v, f=1 mhz, v gs = 0 - 283 - pf c oss output capacitance - 61 - pf c rss reverse transfer capacitance -31-pf q g total gate charge v dd = 10 v, i d = 6 a v gs = 4.5 v figure 14 -3.6-nc q gs gate-source charge - 1.5 - nc q gd gate-drain charge - 1.1 - nc table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 10 v, i d = 3 a, r g = 4.7 , v gs = 4.5 v figure 13 -4.8 - ns t r rise time - 11.2 - ns t d(off) turn-off delay time - 9.4 - ns t f fall time - 5.4 - ns
docid023012 rev 3 5/12 STT6N3LLH6 electrical characteristics 12 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 6 24 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd =6 a, v gs = 0 - 1.1 v t rr reverse recovery time i sd = 6 a, di/dt = 100 a/ s, v dd = 16 v, t j =150 c figure 15 - 10.6 - ns q rr reverse recovery charge - 2.8 - nc i rrm reverse recovery current - 0.5 - a
electrical characteristics STT6N3LLH6 6/12 docid023012 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100ms 10ms tj=150c tc=25c single pulse 1s 0.01 100 am15373v1 10 -4 10 -2 10 -3 10 -1 10 10 1 10 2 t (s) p 10 -3 10 -2 10 -1 10 k 0.02 0.05 0.1 0.2 s =0.5 single pulse 0.01 zthj-pcb=k*rthj-pcb, rthj-pcb=78 c/w 0 am15363v1 i d 12 8 4 0 0 1 v ds (v) 3 (a) 2 16 20 3v 4v v gs =5, 6, 7, 8, 9, 10v 4 am15361v1 i d 16 12 4 0 0 3 v gs (v) (a) 1 20 8 2 v ds =3 v 4 am15369v1 v gs 6 4 2 0 0 2 q g (nc) (v) 8 4 6 10 v dd =10v i d =6a am15358v1 r ds(on) 15 10 5 0 2 10 i d (a) (m ) 6 20 25 4 8 12 v gs = 4.5 v 30 35 40 am15372v1
docid023012 rev 3 7/12 STT6N3LLH6 electrical characteristics 12 figure 8. capacitance variations figure 9. normalized on-resistance vs temperature figure 10. normalized gate threshold voltage vs temperature figure 11. normalized v (br)dss vs temperature figure 12. source-drain diode forward characteristics c 100 1 0 10 v ds (v) (pf) 20 ciss coss crss 10 f= 1 mhz am15370v1 r ds(on) 1.2 1 0.4 00 -55 -5 t j (c) (norm) -30 70 20 45 95 0.2 0.6 0.8 1.4 1.6 120 i d = 3 a v gs = 10 v 145 1.8 am15360v1 v gs(th) 0.6 0.4 0.2 0 -55 -5 t j (c) (norm) -30 0.8 70 20 45 95 120 i d =250 a 145 1 1.2 am15368v1 v (br)dss -55 -5 t j (c) (norm) -30 70 20 45 95 0.8 0.85 0.9 0.95 1 1.1 1.15 1.05 i d = 1ma 120 am15364v1 v sd 0 4 i sd (a) (v) 2 10 6 8 0.2 0.3 0.4 0.5 0.6 0.7 t j =-55c t j =150c t j =25c 0.8 0.9 1 am15365v1
test circuits STT6N3LLH6 8/12 docid023012 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid023012 rev 3 9/12 STT6N3LLH6 package mechanical data 12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 19. sot23-6l package drawing 7049714_k_fu
package mechanical data STT6N3LLH6 10/12 docid023012 rev 3 figure 20. sot23-6l recommended footprint (a) table 8. sot23-6l package mechanical data dim. mm min. typ. max. a 1.25 a1 0.00 0.15 a2 1.00 1.10 1.20 b 0.36 0.50 c 0.14 0.20 d 2.826 2.926 3.026 e 1.526 1.626 1.726 e 0.90 0.95 1.00 h 2.60 2.80 3.00 l 0.35 0.45 0.60 0 8 a. all dimensions are in millimeters 7049714_k_footprint_fu
docid023012 rev 3 11/12 STT6N3LLH6 revision history 12 5 revision history table 9. document revision history date revision changes 11-oct-2012 1 first release. 24-oct-2013 2 modified: r ds(on) value on : features table and in table 4 . document status promoted from preliminary to production data. 11-mar-2014 3 updated section 4: package mechanical data . minor text changes
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